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how can the channel width in a junction field effect transistor be controlled

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How can the channel width in a junction field effect transistor be controlled ?a)by two back biased p

The Junction Field Effect Transistor, or JFET, is a voltage controlled three terminal unipolar semiconductor device available in N-channel and P-channel configurations.

Electrical Engineering (EE) Question  >  How can the channel width in a junction field...

How can the channel width in a junction field effect transistor be controlled ?

a)

by two back biased p-n junctions

b)

by the length of the source

c)

by the length of the drain

d)

by the length of both the source and the drain

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How can the channel width in a junction field effect transistor be controlled ?a)by two back biased p-n junctionsb)by the length of the sourcec)by the length of the draind)by the length of both the source and the drainCorrect answer is option 'A'. Can you explain this answer?

The Junction Field Effect Transistor, or JFET, is a voltage controlled three terminal unipolar semiconductor device available in N-channel and P-channel configurations.

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Junction Field Effect Transistor or JFET Tutorial

Electronics Tutorial about the Junction Field Effect Transistor or JFET Transistor used in Amplifier and Transistor Switching Circuits

Junction Field Effect Transistor

The Junction Field Effect Transistor, or JFET, is a voltage controlled three terminal unipolar semiconductor device available in N-channel and P-channel configurations

The Junction Field Effect Transistor is a unipolar device in which current flow between its two electrodes is controlled by the action of an electric field at a reverse biased pn-junction.

In the Bipolar Junction Transistor  tutorials, we saw that the output Collector current of the transistor is proportional to input current flowing into the Base terminal of the device. This makes the bipolar transistor a “CURRENT” operated device (Beta model) as a smaller current can be used to switch a larger load current.

The Field Effect Transistor, or simply FET however, uses the voltage that is applied to their input terminal, called the Gate to control the current flowing through them resulting in the output current being proportional to the input voltage. As their operation relies on an electric field (hence the name field effect) generated by the input Gate voltage, this then makes the Field Effect Transistor a “VOLTAGE” operated device.

Typical Field Effect

Transistor

The Field Effect Transistor is a three terminal unipolar semiconductor device that has very similar characteristics to those of their Bipolar Transistor counterparts. For example, high efficiency, instant operation, robust and cheap and can be used in most electronic circuit applications to replace their equivalent bipolar junction transistors (BJT) cousins.

Field effect transistors can be made much smaller than an equivalent BJT transistor and along with their low power consumption and power dissipation makes them ideal for use in integrated circuits such as the CMOS range of digital logic chips.

We remember from the previous tutorials that there are two basic types of bipolar transistor construction, NPN and PNP, which basically describes the physical arrangement of the P-type and N-type semiconductor materials from which they are made. This is also true of FET’s as there are also two basic classifications of Field Effect Transistor, called the N-channel FET and the P-channel FET.

The field effect transistor is a three terminal device that is constructed with no PN-junctions within the main current carrying path between the Drain and the Source terminals. These terminals correspond in function to the Collector and the Emitter respectively of the bipolar transistor. The current path between these two terminals is called the “channel” which may be made of either a P-type or an N-type semiconductor material.

The control of current flowing in this channel is achieved by varying the voltage applied to the Gate. As their name implies, Bipolar Transistors are “Bipolar” devices because they operate with both types of charge carriers, Holes and Electrons. The Field Effect Transistor on the other hand is a “Unipolar” device that depends only on the conduction of electrons (N-channel) or holes (P-channel).

The Field Effect Transistor has one major advantage over its standard bipolar transistor cousins, in that their input impedance, ( Rin ) is very high, (thousands of Ohms), while the BJT is comparatively low. This very high input impedance makes them very sensitive to input voltage signals, but the price of this high sensitivity also means that they can be easily damaged by static electricity.

There are two main types of field effect transistor, the Junction Field Effect Transistor or JFET and the Insulated-gate Field Effect Transistor or IGFET), which is more commonly known as the standard Metal Oxide Semiconductor Field Effect Transistor or MOSFET for short.

The Junction Field Effect Transistor

We saw previously that a bipolar junction transistor is constructed using two PN-junctions in the main current carrying path between the Emitter and the Collector terminals. The Junction Field Effect Transistor (JUGFET or JFET) has no PN-junctions but instead has a narrow piece of high resistivity semiconductor material forming a “Channel” of either N-type or P-type silicon for the majority carriers to flow through with two ohmic electrical connections at either end commonly called the Drain and the Source respectively.

There are two basic configurations of junction field effect transistor, the N-channel JFET and the P-channel JFET. The N-channel JFET’s channel is doped with donor impurities meaning that the flow of current through the channel is negative (hence the term N-channel) in the form of electrons.

Likewise, the P-channel JFET’s channel is doped with acceptor impurities meaning that the flow of current through the channel is positive (hence the term P-channel) in the form of holes. N-channel JFET’s have a greater channel conductivity (lower resistance) than their equivalent P-channel types, since electrons have a higher mobility through a conductor compared to holes. This makes the N-channel JFET’s a more efficient conductor compared to their P-channel counterparts.

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