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    in mosfet devices the n-channel type is better the p-channel type in the following respects

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    In MOSFET devices the n

    In MOSFET devices the n-channel type is better than the p-channel type in the following respects—

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    In MOSFET devices the n-channel type is better than the p-channel type in the following respects—

    It has better noise immunity

    It is faster

    It is TTL compatible

    It has better drive capability

    Correct Option: B

    In MOSFET devices the n-channel type is better than the p-channel type because it is faster since mobility of electrons is higher than the holes.

    स्रोत : interviewmania.com

    [Solved] Why is an N

    The mobility of electrons, which are carriers in the case of an n-channel device, is greater than that of holes, which are the carriers in the p-channel devic

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    Why is an N-channel MOSFET preferred over a P-channel MOSFET?

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    Because it allows fast switching

    Because it is TTL compatible.

    Because of its low input impedance.

    Because of the low noise.

    Answer (Detailed Solution Below)

    Option 1 : Because it allows fast switching

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    Detailed Solution

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    The mobility of electrons, which are carriers in the case of an n-channel device, is greater than that of holes, which are the carriers in the p-channel device.

    Thus an n-channel device is faster than a p-channel device.

    The N-channel transistor has lower on-resistance and gate capacitance for the same die area.

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    More Types of MOSFET Questions

    Q1. For an n-channel E-MOSFET Vth = 5V, what is the condition to turn ON the device?Q2. Which of the following statement/s about MOSFET is correct? (I) In the P-type device current flows due to electrons. (II) In depletion type of MOSFET channel is already present. (III) Pinch-off occurs at VDS < VGS − VTHQ3. Enhancement mode is present in ______.Q4. Power MOSFET is a voltage-controlled device that acts as a capacitor and has three terminals namely gate, source, and drain whereas in BJT the corresponding three terminals are base, emitter, and collector. Basically, a PMOSFET has several different features than those of BJT. Which of the following statement(s) is/are CORRECT regarding the same?            A. PMOSFET is a unipolar device B. PMOSFET has a high input impedance C. The secondary breakdown does not occur in PMOSFET D. PMOSFET has higher switching lossesQ5. Which one of the following statements is correct for n-channel or p-channel MOSFET?Q6. Which one of the following is a transfer characteristic of NMOS with standard notations?Q7. Which of the following statements is true for E-MOSFET?Q8. Consider the circuit shown with an ideal long channel nMOSFET (enhancement-mode, the substrate is connected to the source). The transistor is appropriately biased in the saturation region with VGG and VDD such that it acts as a linear amplifier. vi is the small-signal ac input voltage. vA and vB represent the small-signal voltages at nodes A and B, respectively. The value of

    vAvB

    ,is ________ (rounded off to one decimal place).

    Q9. The Gate Impedance of MOSFET is approximately -Q10. MOSFET and a capacitor are used as memory cell in ______ type of memory.

    More MOSFET Questions

    Q1. The O in a MOSFET stands for _______ layer which provides _______ to the device.Q2. For an n-channel E-MOSFET Vth = 5V, what is the condition to turn ON the device?Q3. Which of the following statement/s about MOSFET is correct? (I) In the P-type device current flows due to electrons. (II) In depletion type of MOSFET channel is already present. (III) Pinch-off occurs at VDS < VGS − VTHQ4. Enhancement mode is present in ______.Q5. Power MOSFET is a voltage-controlled device that acts as a capacitor and has three terminals namely gate, source, and drain whereas in BJT the corresponding three terminals are base, emitter, and collector. Basically, a PMOSFET has several different features than those of BJT. Which of the following statement(s) is/are CORRECT regarding the same?            A. PMOSFET is a unipolar device B. PMOSFET has a high input impedance C. The secondary breakdown does not occur in PMOSFET D. PMOSFET has higher switching lossesQ6. In which mode would a MOSFET be in the turned-off state?Q7. Which one of the following statements is correct for n-channel or p-channel MOSFET?Q8. Which one of the following is a transfer characteristic of NMOS with standard notations?Q9. ________ is the device that has the characteristics of both Bipolar Junction Transistor and MOSFET.

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    Answered: In MOSFET devices the N

    Solution for In MOSFET devices the N-channel type is better than the P - Channel type in the following respects. (a) It has higher power density (b) It is…

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    In MOSFET devices the N-channel type is better than the P - Channel type in the following respects. (a) It has higher power density (b) It is faster (c) It is TTL compatible (d) It has larger carrier effective mass Explain your answer.

    In MOSFET devices the N-channel type is better than the P - Channel type in the following respects. (a) It has higher power density (b) It is faster (c) It is TTL compatible (d) It has larger carrier effective mass Explain your answer.

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    Transcribed Image Text:In MOSFET devices the N-channel type is better than the P - Channel type in the following respects. (a) It has higher power density (b) It is faster (c) It is TTL compatible (d) It has larger carrier effective mass Explain your answer.

    Transcribed Image Text:In MOSFET devices the N-channel type is better than the P - Channel type in the following respects. (a) It has higher power density (b) It is faster (c) It is TTL compatible (d) It has larger carrier effective mass Explain your answer.

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